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                        BAS45AL All information provided in this document is subject to legal disclaimers. ? NXP B.V. 2010. All rights reserved. Product data sheet Rev. 5 — 6 August 2010 2 of 11 NXP Semiconductors BAS45AL Low-leakage diode 3. Ordering information 4. Marking 5. Limiting values [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Tj =25°C prior to surge. Table 3. Ordering information Type number Package Name Description Version BAS45AL - hermetically sealed glass surface-mounted package; 2 connectors SOD80C Table 4. Marking codes Type number Marking code BAS45AL marking band Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VRRM repetitive peak reverse voltage -125V VR reverse voltage - 125 V IF forward current [1] -250mA IFRM repetitive peak forward current -625mA IFSM non-repetitive peak forward current square wave [2] tp =1μs-4A tp =1ms - 1 A tp =1s - 0.5 A Ptot total power dissipation Tamb ≤ 25 °C [1] -400mW Tj junction temperature - 175 °C Tstg storage temperature ?65 +175 °C |